Journal article
Vibrational Properties in Highly Strained Hexagonal Boron Nitride Bubbles
Nano letters, Vol.22(4), pp.1525-1533
23/02/2022
PMCID: PMC8880391
PMID: 35107287
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Abstract
Hexagonal boron nitride (hBN) is widely used as a protective layer for few-atom-thick crystals and heterostructures (HSs), and it hosts quantum emitters working up to room temperature. In both instances, strain is expected to play an important role, either as an unavoidable presence in the HS fabrication or as a tool to tune the quantum emitter electronic properties. Addressing the role of strain and exploiting its tuning potentiality require the development of efficient methods to control it and of reliable tools to quantify it. Here we present a technique based on hydrogen irradiation to induce the formation of wrinkles and bubbles in hBN, resulting in remarkably high strains of similar to 2%. By combining infrared (IR) near-field scanning optical microscopy and micro-Raman measurements with numerical calculations, we characterize the response to strain for both IR-active and Raman-active modes, revealing the potential of the vibrational properties of hBN as highly sensitive strain probes.
Details
- Title
- Vibrational Properties in Highly Strained Hexagonal Boron Nitride Bubbles
- Creators
- Elena Blundo - Sapienza University of RomeAlessandro Surrente - Sapienza University of RomeDavide Spirito - Leibniz Institute for High Performance MicroelectronicsGiorgio Pettinari - Institute for Photonics and Nanotechnologies, National Research Council (Rome, Italy)Tanju Yildirim - National Institute for Materials ScienceCarlos Alvarado Chavarin - Leibniz Institute for High Performance MicroelectronicsLeonetta Baldassarre - Sapienza University of RomeMarco Felici - Sapienza University of RomeAntonio Polimeni - Sapienza University of Rome
- Publication Details
- Nano letters, Vol.22(4), pp.1525-1533
- Publisher
- American Chemical Society
- Number of pages
- 9
- Grant note
- 2017Z8TS5B / PRIN2017; Ministry of Education, Universities and Research (MIUR); Research Projects of National Relevance (PRIN) 844837 / European Union; European Union (EU) 13/2008; 85-2017-15200 / Regione Lazio programme "Progetti di Gruppi di ricerca" via LazioInnova spa Sapienza Universita` di Roma IHP Microelectronics "Wolfgang Mehr" Fellowship Award
- Identifiers
- 991013160981302368
- Copyright
- Copyright © 2022 The Authors. Published by American Chemical Society. This publication is licensed under CC-BY 4.0.
- Academic Unit
- Faculty of Science and Engineering
- Language
- English
- Resource Type
- Journal article