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sSNOM characterization of the IR-active vibrational mode in highly strained hBN
Conference proceeding

sSNOM characterization of the IR-active vibrational mode in highly strained hBN

Davide Spirito, Elena Blundo, Alessandro Surrente, Giorgio Pettinari, Tanju Yildirim, Carlos Alvarado Chavarin, Marco Felici, Antonio Polimeni and Leonetta Baldassarre
2022 47TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ 2022)
International Conference on Infrared Millimeter and Terahertz Waves
International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 47th (Delft, Netherlands, 28/08/2022 - 02/09/2022)
2022
DOI: https://doi.org/10.1109/IRMMW-THz50927.2022.9895900
Appears in  Recent Faculty of Science and Engineering Publications

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Abstract

Boron Insulators Reliability Strain Photonics
Hexagonal Boron Nitride is a layered insulator often employed as a protective layer for heterostructures or as host for single photon emitters. In particular, the emission of defects in hBN can be tuned by strain, and it is therefore of the utmost importance to have a reliable method to quantify strain in this system. Here we present a sSNOM experiment on micrometricsized bubbles of hBN with the aim of addressing the response to strain of the transverse optical IR-active mode.

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